Semiconductor device and method of forming a semiconductor device
US6437374B1 · kind B1 · utility
23Cited by
1References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 7, 2001 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | May 7, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes group III-V layers formed over a substrate. At least one of the group III-V layers is doped with a dopant. The dopant includes a first dopant and one of a second dopant and an isovalent impurity. The first dopant has a covalent radius different in size than the covalent radii of each of the second dopant and the isovalent impurity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.