Dual trench isolation for a phase-change memory cell and method of making same
US6437383B1 · kind B1 · utility
205Cited by
2References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 21, 2000 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | Dec 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a phase-change memory device. The device includes a double-trench isolation structure around the diode stack that communicates to the lower electrode. The present invention also relates to a method of making a phase-change memory device. The method includes forming two orthogonal and intersecting isolation trenches around a memory cell structure diode stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.