Daniel Xu
24Patents
14h-index
19Co-inventors
74Inventor score
Filing activity: Jul 12, 1999 → Dec 19, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6566700B2 | Carbon-containing interfacial layer for phase-change memory | Electricity | 412 | Expired |
| US6673700B2 | Reduced area intersection between electrode and programming element | Physics | 375 | Expired |
| US6667900B2 | Method and apparatus to operate a memory cell | Physics | 239 | Expired |
| US6933516B2 | Forming tapered lower electrode phase-change memories | Physics | 208 | Expired |
| US6861267B2 | Reducing shunts in memories with phase-change material | Electricity | 207 | Expired |
| US6437383B1 | Dual trench isolation for a phase-change memory cell and method of making same | Electricity | 205 | Expired |
| US6462984B1 | Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory array | Physics | 188 | Expired |
| US6800563B2 | Forming tapered lower electrode phase-change memories | Physics | 177 | Expired |
| US6514805B2 | Trench sidewall profile for device isolation | Electricity | 175 | Expired |
| US6404665B1 | Compositionally modified resistive electrode | Physics | 174 | Expired |
| US6563164B2 | Compositionally modified resistive electrode | Physics | 170 | Expired |
| US6642102B2 | Barrier material encapsulation of programmable material | Emerging Cross-Sectional Technologies | 165 | Expired |
| US6265292A | Method of fabrication of a novel flash integrated circuit | Electricity | 47 | Expired |
| US6992365B2 | Reducing leakage currents in memories with phase-change material | Emerging Cross-Sectional Technologies | 19 | Expired |
| US6869841B2 | Carbon-containing interfacial layer for phase-change memory | Electricity | 14 | Expired |
| US7685854B2 | Axial spring balancing pin tumbler lock | Emerging Cross-Sectional Technologies | 11 | Active |
| US6878618B2 | Compositionally modified resistive electrode | Physics | 6 | Expired |
| US7064344B2 | Barrier material encapsulation of programmable material | Emerging Cross-Sectional Technologies | 3 | Expired |
| US8350356B2 | Anti-fuse based programmable serial number generator | Electricity | 1 | Active |
| US7422917B2 | Forming tapered lower electrode phase-change memories | Physics | 0 | Active |
| US7161225B2 | Reducing shunts in memories with phase-change material | Electricity | 0 | Expired |
| US7906391B2 | Reducing leakage currents in memories with phase-change material | Emerging Cross-Sectional Technologies | 0 | Active |
| US8536637B2 | Array architecture for embedded flash memory devices | Electricity | 0 | Active |
| US9780164B2 | Silicon-on-insulator radio frequency device and silicon-on-insulator substrate | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.