Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices
US6437419B1 · kind B1 · utility
24Cited by
12References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 29, 1999 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | Nov 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/141
Abstract
A power semiconductor device has an integral source/emitter ballast resistor. The gate has partial gate structures spaced apart from each other. Emitter resistors are provided beneath sidewall spacers on the ends of the gate structures. The emitter resistors have little effect on the threshold voltage under normal operating conditions, but rapidly saturate the device during short circuit conditions. This in turn increases the short circuit withstand capability o the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.