Plasma generator
US6437512B1 · kind B1 · utility
53Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2000 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | Nov 15, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma generator comprises an ICP chamber and a surface wave conducting device. The upper wall of the ICP chamber is a quartz plate, and an electrode inside the lower ICP chamber is coupled with a RF bias supply. The ICP chamber is used to produce a first plasma. The surface wave conducting device is located on the quartz plate. The surface wave conducting device can make a microwave become a standing microwave, then a second plasma excited by the standing microwave is produced in the upper ICP chamber. Then, the first plasma and the second plasma are mixed in the ICP chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.