Deposition of fluorosilsesquioxane films
US6440550B1 · kind B1 · utility
9Cited by
88References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 18, 1999 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Oct 18, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided an array of fluoro-substituted silsesquioxane thin film precursors having a structure wherein fluoro groups are bonded to the silicon atoms of a silsesquioxane cage. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [F—SiO1.5]x[H—SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. Also provided are films made from these precursors and objects comprising these films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.