Onium salts, photoacid generators for resist compositions, resist compositions, and patterning process
US6440634B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2000 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Aug 15, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/122
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Onium salts of the formula (1) are novel. R1 is C1-10 alkyl or C6-14 aryl, R2 is H or C1-6 alkyl, p is an integer of 1 to 5, q is an integer of 0 to 4, p+q=5, R3 is C1-10 alkyl or C6-14 aryl, M is a sulfur or iodine atom, and “a” is equal to 3 or 2. A chemical amplification type resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect after coating, development and stripping, and improved pattern profile after development.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.