Positive resist composition suitable for lift-off technique and pattern forming method
US6440646B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2001 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Mar 14, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0233
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A positive resist composition contains (A) a novolak resin having a weight average molecular weight calculated as polystyrene of 2,000-20,000 wherein 2.5-27 mol % of the hydrogen atom of a hydroxyl group is replaced by a 1,2-naphthoquinonediazidosulfonyl group and (B) a low molecular aromatic compound having phenolic hydroxyl groups and 2-20 benzene rings wherein the ratio of the number of phenolic hydroxyl groups to the number of benzene rings is between 0.5 and 2.5. By forming a resist layer on a substrate from the positive resist composition and baking the resist layer at 90-130° C., followed by exposure and development, there is formed a resist pattern having an undercut of desired configuration. Owing to high resolution and improved dimensional control, heat resistance and film retention, the resist pattern lends itself to a lift-off technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.