Reduction of plasma charge-induced damage in microfabricated devices
US6440756B2 · kind B2 · utility
3Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2000 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Dec 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0206
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for reducing plasma-induced charging damage in a semiconducting device are provided. The method includes exposing an article having a dielectric material susceptible to plasma-induced charging, to vacuum-ultraviolet (VUV) radiation of an energy greater than the bandgap energy of the dielectric material during or after plasma processing of the device. The plasma-induced charge is conducted from, or recombined at, the charging site.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.