Microfabrication using germanium-based release masks
US6440766B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 7, 2000 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Jul 7, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/159
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of fabricating MicroElectroMechanical systems. The method includes: providing a substrate in which electrical interconnections and a sacrificial layer have been formed, forming a release mask including germanium, etching exposed sacrificial material, and removing the release mask. The performance of MicroElectroMechanical devices is improved by 1) integrating electronics on the same substrate as the mechanical elements, 2) increasing the proximity of electronics and mechanical elements, 3) increasing the undercut of a release etch to reduce or eliminate etch holes or to allow circuit elements to be undercut, 4) increasing the yield and reliability of the MEMS release processes. In addition to released mechanical structures, the invention also provides a means for forming circuits such as a bandgap reference as a released MEMS element. Forming a bandgap circuit as a released MEMS element may improve reference voltage performance by allowing resistive heating of the circuit region to a constant, elevated temperature independent of the substrate temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.