Process of manufacturing a DRAM cell capacitor having increased trench capacitance

US6440813B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Christopher N. Collins · Poughkeepsie, US
• Harris C. Jones · Stormville, US
• James P. Norum · Millwood, US
• Stefan Schmitz · Stuttgart, DE

Key dates

• Filing date: Jan 23, 2001
• Grant date: Aug 27, 2002
• Expiry date: Jan 23, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/047

Abstract

A trench capacitor having an increased surface area. In one embodiment, the trench capacitor is a dual trench capacitor having a first trench and a second trench wherein inner walls of the trenches electrically connect. The invention also includes a single trench capacitor wherein the trench is curved around an axis substantially perpendicular to a substrate surface.