Method and structure for a semiconductor fuse
US6440834B2 · kind B2 · utility
26Cited by
10References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2001 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Apr 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor fuse structure having a conductive fuse material abutting a first and second conductive line is provided. The fuse of the present invention does not substantially damage the surrounding semiconductor material therefore it can be used with a wide variety of materials including porous, mechanically fragile, low dielectric constant materials and high conductive metals like Cu. Methods of fabricating such a semiconductor fuse structure are also provided herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.