Semiconductor devices with selectively doped III-V nitride layers
US6441393B2 · kind B2 · utility
79Cited by
4References
13Claims
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Key dates
| Filing date | Nov 17, 1999 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Nov 17, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/811
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device is provided having n-type device layers of III-V nitride having donor dopants such as germanium (Ge), silicon (Si), tin (Sn), and/or oxygen (O) and/or p-type device layers of III-V nitride having acceptor dopants such as magnesium (Mg), beryllium (Be), zinc (Zn), and/or cadmium (Cd), either simultaneously or in a doping superlattice, to engineer strain, improve conductivity, and provide longer wavelength light emission.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.