Werner Goetz
34Patents
15h-index
44Co-inventors
81Inventor score
Filing activity: Jun 20, 1974 → Dec 23, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6635904B2 | Indium gallium nitride smoothing structures for III-nitride devices | Electricity | 272 | Expired |
| US6489636B1 | Indium gallium nitride smoothing structures for III-nitride devices | Electricity | 224 | Expired |
| US6441393B2 | Semiconductor devices with selectively doped III-V nitride layers | Electricity | 79 | Expired |
| US6194742A | Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices | Electricity | 76 | Expired |
| US6274399A | Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices | Electricity | 67 | Expired |
| US6900067B2 | Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers | Electricity | 53 | Expired |
| US7547908B2 | III-nitride light emitting devices grown on templates to reduce strain | Electricity | 50 | Active |
| US6630692B2 | III-Nitride light emitting devices with low driving voltage | Electricity | 42 | Expired |
| US6576932B2 | Increasing the brightness of III-nitride light emitting devices | Electricity | 33 | Expired |
| US5977612A | Semiconductor devices constructed from crystallites | Electricity | 28 | Expired |
| US6914272B2 | Formation of Ohmic contacts in III-nitride light emitting devices | Electricity | 28 | Expired |
| US6657300B2 | Formation of ohmic contacts in III-nitride light emitting devices | Electricity | 27 | Expired |
| US6989555B2 | Strain-controlled III-nitride light emitting device | Electricity | 26 | Expired |
| US6955933B2 | Light emitting diodes with graded composition active regions | Electricity | 21 | Expired |
| US4605188A | Apparatus for seating a terminal or similar office equipment | Emerging Cross-Sectional Technologies | 17 | Expired |
| US7345324B2 | Light emitting diodes with graded composition active regions | Electricity | 12 | Expired |
| US3948008A | Prefabricated structural element, especially balcony element | Fixed Constructions | 10 | Expired |
| US7345323B2 | Formation of Ohmic contacts in III-nitride light emitting devices | Electricity | 7 | Expired |
| US6090300A | Ion-implantation assisted wet chemical etching of III-V nitrides and alloys | Electricity | 6 | Expired |
| US7534638B2 | III-nitride light emitting devices grown on templates to reduce strain | Electricity | 3 | Active |
| US7951693B2 | III-nitride light emitting devices grown on templates to reduce strain | Electricity | 2 | Active |
| US8474675B2 | Device for automatically controlling the edges of a web of sheeting | Performing Operations; Transporting | 1 | Active |
| US7880186B2 | III-nitride light emitting device with double heterostructure light emitting region | Electricity | 0 | Active |
| US10887960B2 | Color tunable light emitting diode (LED) systems, LED lighting systems, and methods | Emerging Cross-Sectional Technologies | 0 | Active |
| US9634181B2 | Method of forming a composite substrate | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.