Structure and method for ultra-scalable hybrid DRAM cell with contacted P-well
US6441422B1 · kind B1 · utility
14Cited by
13References
14Claims
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Key dates
| Filing date | Nov 3, 2000 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Nov 23, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0385
Abstract
An ultra-scalable hybrid memory cell having a low junction leakage and a process of fabricating the same are provided. The ultra-scalable hybrid memory cell contains a conductive connection to the body region therefore avoiding isolation of the P-well due to cut-off by the buried strap outdiffusion region. The ultra-scalable hybrid memory cell avoids the above by using a shallower than normal isolation region that allows the P-well to remain connected to the body of the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.