Embedded type flash memory structure and method for operating the same
US6441443B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2001 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Feb 13, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0416
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides an embedded type flash memory structure and a method for operating the same. The memory structure of the present invention comprises a first deep doped-region formed on the surface of a semiconductor substrate. A second doped-region is implanted in the first deep doped-region. A plurality of first shallow doped-regions are respectively formed in the second doped-region and the first deep doped-region to be used as drains and sources. A dielectric insulating layer and a poly-silicon gate are stacked above the first deep doped-region between the source and the drain. The present invention also proposes programming, erasing, and reading processes corresponding to the flash memory cell structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.