Structure and method of alternating precharge in dynamic SOI circuits
US6441646B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2001 |
| Grant date | Aug 27, 2002 |
| Priority date | — |
| Expiry date | Oct 31, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/0963
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A structure and method for reducing bipolar current in of a SOI circuit by alternating precharge low and precharge high methodologies comprises a reset signal source coupled to an inverter and a primary node, further coupled to a first and second PFET device; a clock signal source; coupled to a first NFET device and a third PFET device; a first input signal source coupled to a second NFET device and a fourth PFET device; a first NFET stack node coupled to the third PFET device, the first NFET device, the primary node, and the second NFET device; a second input signal source coupled to a third NFET device; a fifth PFET device coupled to the fourth PFET device; a power supply voltage source coupled to the fifth PFET device; and a second NFET node coupled to the fourth PFET device, the second NFET device, and the third NFET device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.