Method for cleaning plasma treatment device and plasma treatment system
US6443165B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 1998 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Sep 21, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for use in a plasma treatment system that shortens the time required for the cleaning of a fluorine containing carbon film adheared in a vacuum vessel and protects the surface of a transfer table when the cleaning is carried out. After a CF film is deposited by, e.g., a plasma treatment system, the cleaning of the CF film adhered in a vacuum vessel 2 is carried out. In the cleaning, a plasma of O2 gas is produced, and the C—C and C—F bonds on the surface of the CF film are physically and chemically cut by the active species of O produced by the plasma. The O2 gas penetrates into the CF film at places where the C—C and C—F bonds have been cut, to react with C of the CF film to form CO2 which scatters. On the other hand, F scatters as F2. Thus, the CF film is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.