Hollow cathode sputter source
US6444100B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 30, 2001 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Jan 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3405
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetically enhanced hollow cathode sputter source for providing a sputtered particle flux containing an increased proportion of ionized target material comprises a four-sided, box-shaped chamber open at the top and defining an interior space. Each of the interiorly facing surfaces of the chamber comprises the target material and a magnet means extends continuously around the exterior surface of the four vertical sides of the chamber for providing a sputtering plasma generated within the interior space with a racetrack-shaped electron Hall drift current. An electrically biasable substrate is positioned opposite the open top for receiving sputtered particle flux for deposition thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.