Dielectric films for narrow gap-fill applications
US6444495B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2001 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Jan 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/09701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.