Method of manufacturing silicon thin film devices using laser annealing in a hydrogen mixture gas followed by nitride formation
US6444506B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 1996 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Oct 23, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67739
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A crystalline silicon film is obtained by laser-annealing a non-single-crystal silicon film by illuminating it with a laser beam in a hydrogen-inclusive atmosphere. Further, the above laser annealing step and a step of forming an insulating film to become a gate insulating film are performed consecutively. As a result, hydrogen is effectively confined in a channel forming region and the boundary between the channel forming region and the gate insulating film is given superior characteristics, which lead to proper threshold voltage control, a reduction in S-value, and an increase in mobility. The hydrogen confinement can be made more effective by employing a silicon nitride film or a multi-layer film including a silicon nitride film as the insulating film to become the gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.