High Q inductor with Cu damascene via/trench etching simultaneous module
US6444517B1 · kind B1 · utility
34Cited by
5References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2002 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Jan 23, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76838
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A new method is provided for the creation of an inductive over the surface of a semiconductor substrate. A first layer of metal is created in a layer of dielectric, a second layer of metal is created overlying the first layer of metal. The first layer of metal combined with the second layer of metal form an inductor of increased height, reducing the resistivity of the inductor, increasing the Q value of the inductor. The new method of creating an inductor can be combined with creating contact points that connect to contact points in the active region of the surface of a semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.