Method for forming lining oxide in shallow trench isolation incorporating pre-annealing step
US6444541B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2000 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Aug 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming lining oxide in an opening for a shallow trench isolation and a method for forming a shallow trench isolation incorporating a lining oxide layer are described. In the method for forming lining oxide, a silicon substrate is first provided, followed by a process of forming a pad oxide layer and a silicon nitride mask sequentially on top of the silicon substrate. A trench opening is then patterned and formed in the silicon substrate for the shallow trench isolation. The silicon substrate is then annealed at a temperature of at least 1,000° C. in a furnace in an environment that contains not more than 10 vol. % oxygen. A lining oxide layer is formed in the same furnace used for annealing the structure of the trench opening in the silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.