Integrated circuit and method

US6444542B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Theodore S. Moise · Dallas, US
• Guoqiang Xing · Plano, US
• Mark Visokay · Dallas, US
• Justin Gaynor · Mountain View, US
• Stephen Roy Gilbert · San Francisco, US
• Francis G. Celii · Dallas, US
• Scott R. Summerfelt · Dallas, US
• Luigi Colombo · Dallas, US

Key dates

• Filing date: Apr 3, 2001
• Grant date: Sep 3, 2002
• Expiry date: Apr 3, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31144
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.