Inventor · Dallas, TX, US

Mark Visokay

111Patents
28h-index
74Co-inventors
93Inventor score

Filing activity: Dec 2, 1992 → Oct 9, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US6544906B2 Annealing of high-k dielectric materials Electricity 516 Expired
US6211035A Integrated circuit and method Electricity 248 Expired
US6936508B2 Metal gate MOS transistors and methods for making the same Electricity 142 Expired
US6835639B2 Multiple work function gates Electricity 116 Expired
US7045456B2 MOS transistor gates with thin lower metal silicide and methods for making the same Electricity 111 Expired
US6821873B2 Anneal sequence for high-&kgr; film property optimization Electricity 89 Expired
US6852645B2 High temperature interface layer growth for high-k gate dielectric Electricity 84 Expired
US6696332B2 Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing Electricity 82 Expired
US6090697A Etchstop for integrated circuits Electricity 71 Expired
US6750126B1 Methods for sputter deposition of high-k dielectric films Electricity 68 Expired
US5972722A Adhesion promoting sacrificial etch stop layer in advanced capacitor structures Electricity 65 Expired
US6596583B2 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers Electricity 63 Expired
US7105891B2 Gate structure and method Electricity 60 Expired
US6518610B2 Rhodium-rich oxygen barriers Electricity 53 Expired
US6809370B1 High-k gate dielectric with uniform nitrogen profile and methods for making the same Electricity 51 Expired
US7135361B2 Method for fabricating transistor gate structures and gate dielectrics thereof Electricity 49 Expired
US7018902B2 Gate dielectric and method Electricity 46 Expired
US6492241B1 Integrated capacitors fabricated with conductive metal oxides Electricity 43 Expired
US6979623B2 Method for fabricating split gate transistor device having high-k dielectrics Electricity 41 Expired
US6380080B2 Methods for preparing ruthenium metal films Chemistry; Metallurgy 41 Expired
US7229873B2 Process for manufacturing dual work function metal gates in a microelectronics device Electricity 39 Expired
US7045431B2 Method for integrating high-k dielectrics in transistor devices Electricity 37 Expired
US7148546B2 MOS transistor gates with doped silicide and methods for making the same Electricity 37 Expired
US6770521B2 Method of making multiple work function gates by implanting metals with metallic alloying additives Electricity 36 Expired
US7115530B2 Top surface roughness reduction of high-k dielectric materials using plasma based processes Electricity 34 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.