Method of forming a damascene structure using a sacrificial conductive layer
US6444557B1 · kind B1 · utility
10Cited by
8References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2000 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Mar 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a damascene structure using a sacrificial conductive layer to provide a uniform focus plane for the photolithography tool during formation of circuit features. In particular, a metal layer is provided between the insulative layer and the photoresist, upon which the capacitive sensors of the photolithography tool focus during the formation of the circuit features, namely, troughs and vias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.