Method and apparatus for etching silicon
US6444589B1 · kind B1 · utility
7Cited by
2References
13Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jul 13, 2000 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Jul 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6708
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method and an etching apparatus for applying an etchant containing nitric acid and hydrofluoric acid to silicon to etch the silicon. The etchant used in etching is recovered, and brought into contact with a gas inert to the etchant, whereby the etchant is regenerated. At least a part of the regenerated etchant is reused in etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.