Photodetecting device
US6445000B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2000 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Aug 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/14
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A first multi-quantum well structure 12 is formed on a GaAs substrate 10. The first multi-quantum well structure 12 is formed of an AlGaAs barrier layer and a GaAs well layer alternately laid one on the other to form a multi-quantum well. The GaAs barrier layer is not doped with an impurity. A second multi-quantum well structure 14 is formed on the first multi-quantum well structure 12. The second multi-quantum well structure 14 is formed of an AlGaAs barrier layer and a GaAs well layer alternately laid one on the other to form a multi-quantum well. The GaAs barrier layer is not doped with an impurity. Whereby a required electrode area can be smaller to thereby obtain higher detection sensitivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.