Light emitting diodes with spreading and improving light emitting area
US6445007B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2001 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Mar 19, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
The present invention provides a light semiconductor device comprising a substrate and a first semiconductor structure on the substrate. A light emitting structure is on a first portion of the first semiconductor structure. A first contact structure is on a second portion of the first semiconductor structure. The second portion is separated from the first portion of the first semiconductor structure. The first contact structure has a first shape. A second semiconductor structure is on the light emitting structure. A transparent contact is on the second semiconductor structure and has a cut-off portion to expose the portion of the second semiconductor structure and a second shape. A second contact structure is on the cut-off portion of the transparent contact. The second contact structure contacting the second semiconductor has a third shape. The second contact structure with the third shape corresponds to both the transparent contact with the second shape and the first contact structure with the first shape whereby a relationship provides a plurality of current paths with substantially equal distances between the first contact structure and the second contact structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.