Bor-Jen Wu
14Patents
6h-index
19Co-inventors
63Inventor score
Filing activity: Dec 13, 1995 → Aug 1, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6468824B2 | Method for forming a semiconductor device having a metallic substrate | Electricity | 107 | Expired |
| US6555405B2 | Method for forming a semiconductor device having a metal substrate | Emerging Cross-Sectional Technologies | 82 | Expired |
| US6445007B1 | Light emitting diodes with spreading and improving light emitting area | Electricity | 44 | Expired |
| US6884646B1 | Method for forming an LED device with a metallic substrate | Electricity | 21 | Expired |
| US6608328B2 | Semiconductor light emitting diode on a misoriented substrate | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5879962A | III-V/II-VI Semiconductor interface fabrication method | Electricity | 8 | Expired |
| US8523388B2 | Planar LED lighting apparatus | Mechanical Engineering; Lighting; Heating | 4 | Active |
| US7341882B2 | Method for forming an opto-electronic device | Physics | 4 | Expired |
| US7364926B2 | Method for manufacturing gallium nitride light emitting diode devices | Electricity | 2 | Active |
| US10903267B2 | System and method for making micro LED display | Electricity | 1 | Active |
| US8702270B2 | Tube type LED lighting assembly | Mechanical Engineering; Lighting; Heating | 1 | Active |
| US7368369B2 | Method for activating P-type semiconductor layer | Electricity | 0 | Expired |
| US11041711B2 | Optical measurement system | Physics | 0 | Active |
| US6963167B2 | Electrode structure for a light-emitting element | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.