Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings
US6445009B1 · kind B1 · utility
16Cited by
5References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2000 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Aug 8, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A device includes a silicon substrate provided with a coating including at least one stacking constituted by a plane of GaN or GaInN quantum dots emitting visible light at room temperature in a respective layer of AIN or GaN. The method of making the device is also disclosed. The device can be incorporated in electroluminescent devices and exchange devices, emitting white light in particular.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.