Photomask method for making the same capacitor cell area near outmost cell arrays
US6446252B1 · kind B1 · utility
1Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2000 |
| Grant date | Sep 3, 2002 |
| Priority date | — |
| Expiry date | Dec 27, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70441
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for manufacturing a photomask of cylindrical capacitor arrays surrounded by a corrugated protection trench is provided. First, a capacitor array layout is generated, next, the capacitor array patterns are copied to protection trench area with exact the same shape and pitch, finally, the protection trench is finished by filling connecting patterns between gaps of the capacitor arrays. A corrugated close loop protection trench pattern can hence be developed upon photoresist through the exposing and is developing of a photo stepper.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.