Chemical mechanical polishing slurry useful for copper/tantalum substrates
US6447371B2 · kind B2 · utility
32Cited by
12References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2001 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | Mar 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.