Chemical mechanical polishing slurry system having an activator solution
US6447563B1 · kind B1 · utility
57Cited by
22References
39Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 22, 1999 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | Oct 22, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09G1/02
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
This invention relates to a CMP slurry system for use in semiconductor manufacturing. The slurry system comprises two parts. The first part is a generic dispersion that only contains an abrasive and, optionally, a surfactant and a stabilizing agent. The generic dispersion can be used for polishing metals as well as interlayer dielectrics (ILD). The second part is a novel activator solution comprising at least two components selected from the group consisting of: an oxidizer, acids, amines, chelating agents, fluorine-containing compounds, corrosion inhibitors, buffering agents, surfactants, biological agents and mixtures thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.