Patent · US Expired

Crystal puller and method for growing monocrystalline silicon ingots

US6447601B1 · kind B1 · utility

6Cited by

4References

17Claims

0Family size

Assignee

MEMC Electronic Materials, Inc. · US

Inventors

Richard J. Phillips · Saint Peters, US
Larry E. Drafall · Holden, US
Kirk D. McCallum · Warrenton, US

Key dates

Filing date	Mar 19, 2001
Grant date	Sep 10, 2002
Priority date	—
Expiry date	Mar 19, 2021

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B15/14
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A crystal puller for growing monocrystalline silicon ingots according to the Czochralski method includes a housing and a crucible in the housing for containing molten silicon. The crucible has a side wall having a transmittance of at least about 80% generally throughout a light wavelength range of about 500 to about 2500 nanometers. A pulling mechanism is included for pulling a growing ingot upward from the molten silicon. In operation, polycrystalline silicon is charged to the crucible and the crucible is heated to melt the polycrystalline silicon for forming a molten silicon melt in the crucible. A seed crystal is then brought into contact with the molten silicon in the crucible and a monocrystalline silicon ingot is pulled up from the molten silicon.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.