Polycrystalline silicon thin film forming method
US6447850B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2000 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | Aug 22, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a thin polycrystalline silicon film and a thin film forming apparatus allowing inexpensive formation of a thin polycrystalline silicon film at a relatively low temperature with high productivity. More specifically, a method of forming a thin polycrystalline silicon film and a thin film forming apparatus in which a state of plasma is controlled to achieve an emission intensity ratio of hydrogen atom radicals (H&bgr;) of one or more to the emission intensity of SiH* radicals in the plasma. The thin film forming apparatus of a plasma CVD type includes a deposition chamber accommodating a deposition target substrate, a discharging electrode for plasma formation connected to a discharging power source, a gas supply device for supplying a gas and an exhaust device, and further includes an emission-spectrometer and a probe measuring device as well as a control portion for controlling at least one of the power supply, the gas supply and gas exhausting, for maintaining a desired state of plasma based on information detected by them.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.