Method for making an accurate miniature semiconductor resonator
US6448103B1 · kind B1 · utility
3Cited by
15References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 30, 2001 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | May 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H3/0077
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A cantilevered beam is formed over a cavity to an accurate length by isotropically etching a fast-etching material, such as hydrogen silisquioxane, out of the cavity. The cavity is initially defined within a slow-etching material. The selectivity of the etch rates of the material within the cavity relative to the material defining the walls of the cavity permits accurate control of the length of the free end of the cantilevered beam. The resonant frequency of the cantilevered beam can be tuned to a narrow predetermined range by laser trimming.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.