Danielle A. Thomas
37Patents
11h-index
14Co-inventors
68Inventor score
Filing activity: Feb 17, 1998 → Sep 14, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6326689A | Backside contact for touchchip | Electricity | 161 | Expired |
| US6091082A | Electrostatic discharge protection for integrated circuit sensor passivation | Emerging Cross-Sectional Technologies | 39 | Expired |
| US6515488B1 | Fingerprint detector with scratch resistant surface and embedded ESD protection grid | Physics | 36 | Expired |
| US6180989A | Selectively doped electrostatic discharge layer for an integrated circuit sensor | Emerging Cross-Sectional Technologies | 27 | Expired |
| US6330145A | Apparatus and method for contacting a sensor conductive layer | Physics | 16 | Expired |
| US6743652B2 | Method for making an integrated circuit device including photodiodes | Electricity | 16 | Expired |
| US6300670A | Backside bus vias | Electricity | 15 | Expired |
| US6580109B1 | Integrated circuit device including two types of photodiodes | Electricity | 13 | Expired |
| US6440814B1 | Electrostatic discharge protection for sensors | Physics | 12 | Expired |
| US6746953B2 | Method of forming backside bus vias | Electricity | 12 | Expired |
| US8569809B2 | Organic semiconductor sensor device | Electricity | 12 | Active |
| US6555888B2 | Electrostatic discharge protection for sensors | Physics | 11 | Expired |
| US6478976B1 | Apparatus and method for contacting a conductive layer | Physics | 10 | Expired |
| US6326227A | Topographical electrostatic protection grid for sensors | Physics | 9 | Expired |
| US6803249B2 | Method of making an integrated photodetector in which a silicon nitride layer forms an anti-reflective film and part of multi-layer insulator within transistor structures | Electricity | 9 | Expired |
| US6603192B2 | Scratch resistance improvement by filling metal gaps | Electricity | 9 | Expired |
| US6740945B2 | Apparatus and method for contacting a conductive layer | Physics | 9 | Expired |
| US6501142B2 | Topographical electrostatic protection grid for sensors | Physics | 8 | Expired |
| US6610555B1 | Selectively doped electrostatic discharge layer for an integrated circuit sensor | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6423995B1 | Scratch protection for direct contact sensors | Electricity | 7 | Expired |
| US7141839B2 | Organic semiconductor sensor device | Electricity | 5 | Expired |
| US7096581B2 | Method for providing a redistribution metal layer in an integrated circuit | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6472246B1 | Electrostatic discharge protection for integrated circuit sensor passivation | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6448103B1 | Method for making an accurate miniature semiconductor resonator | Electricity | 3 | Expired |
| US6559488B1 | Integrated photodetector | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.