Patent · US Expired

Method and system for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer

US6448152B1 · kind B1 · utility

109Cited by
4References
29Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 16, 2001
Grant dateSep 10, 2002
Priority date
Expiry dateJul 16, 2021

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG05B2219/45031
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer. For example, a plurality of donor wafers with different silicon layer thicknesses along with a plurality of handle wafers with different oxide layer thicknesses are fabricated. Subsequently, a customer may place an order for silicon-on-insulator (SOI) wafers which share defined parameters. Therefore, a prefabricated donor wafer and handle wafer are selected based on the customer's defined parameters and then bonded together. Next, the donor wafer is cleaved from the handle wafer wherein the handle wafer retains the silicon layer of the donor wafer. The silicon layer thickness of the handle wafer may be altered to meet the customer's parameters. For example, an epitaxial smoothing process may decrease the silicon layer thickness while an epitaxial thickening process may increase the silicon layer thickness.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.