Igor J. Malik
20Patents
15h-index
13Co-inventors
74Inventor score
Filing activity: Mar 11, 1996 → Feb 19, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6448152B1 | Method and system for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer | Physics | 109 | Expired |
| US6969668B1 | Treatment method of film quality for the manufacture of substrates | Emerging Cross-Sectional Technologies | 86 | Expired |
| US6171965A | Treatment method of cleaved film for the manufacture of substrates | Emerging Cross-Sectional Technologies | 79 | Expired |
| US6287941A | Surface finishing of SOI substrates using an EPI process | Emerging Cross-Sectional Technologies | 78 | Expired |
| US6265328A | Wafer edge engineering method and device | Electricity | 68 | Expired |
| US6881644B2 | Smoothing method for cleaved films made using a release layer | Emerging Cross-Sectional Technologies | 53 | Expired |
| US6204151A | Smoothing method for cleaved films made using thermal treatment | Electricity | 40 | Expired |
| US6455399B2 | Smoothing method for cleaved films made using thermal treatment | Electricity | 38 | Expired |
| US6221774A | Method for surface treatment of substrates | Performing Operations; Transporting | 38 | Expired |
| US7094666B2 | Method and system for fabricating strained layers for the manufacture of integrated circuits | Electricity | 28 | Expired |
| US6274059A | Method to remove metals in a scrubber | Performing Operations; Transporting | 25 | Expired |
| US7598153B2 | Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species | Electricity | 23 | Active |
| US7390724B2 | Method and system for lattice space engineering | Electricity | 22 | Expired |
| US5919311A | Control of SiO.sub.2 etch rate using dilute chemical etchants in the presence of a megasonic field | Electricity | 22 | Expired |
| US7147709B1 | Non-contact etch annealing of strained layers | Electricity | 19 | Expired |
| US7391047B2 | System for forming a strained layer of semiconductor material | Electricity | 14 | Expired |
| US7595499B2 | Method and system for fabricating strained layers for the manufacture of integrated circuits | Electricity | 10 | Active |
| US7253081B2 | Surface finishing of SOI substrates using an EPI process | Emerging Cross-Sectional Technologies | 4 | Expired |
| US8187377B2 | Non-contact etch annealing of strained layers | Electricity | 3 | Active |
| US6391219B1 | Smoothing method for cleaved films made using a release layer | General | 0 | Revoked |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.