Fabrication process for a semiconductor device
US6448157B1 · kind B1 · utility
18Cited by
13References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2000 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | Jan 31, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/928
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A surface of a substrate is oxidized at a temperature equal to or higher than 1050° C., or at a oxidation speed equal to or higher than 7.5 nm/min to form an oxide film with a thickness equal to or more than 1500 nm. when the oxide film is removed, a density of pits existent at the surface of a substrate is equal to or less than that prior to the oxidation treatment and a depth of a pit existent there is equal to or less than 50 nm. An element isolation withstand voltage can be prevented from lowering and a fabrication yield of a miniaturized, highly integrated semiconductor device can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.