Method for producing schottky diodes
US6448162B1 · kind B1 · utility
2Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2000 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | Nov 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
Abstract
A method for producing a Schottky diode formed of a doped guard ring in an edge area of the Schottky contact is described. The guard ring is produced by depositing a high barrier material, especially made of platinum, on the surface of the semiconductor layer. The surface is provided with a structured masking layer beforehand, and which is subsequently etch-backing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.