Deposition of in-situ doped semiconductor film and undoped semiconductor film in the same reaction chamber
US6448180B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2001 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | May 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
For depositing semiconductor films on a plurality of sets of semiconductor wafers, a first set of semiconductor wafers carried by a wafer boat are placed within a reaction chamber. An in-situ doped amorphous semiconductor film is deposited on the first set of semiconductor wafers while the first set of semiconductor wafers carried by the wafer boat are within the reaction chamber. The first set of semiconductor wafers carried by the wafer boat are removed from the reaction chamber, and the first set of semiconductor wafers are removed from the wafer boat. The wafer boat that is empty of any semiconductor wafers is placed back within the reaction chamber. A first undoped semiconductor film having a thickness in a range of from about 8,000 å (angstroms) to about 12,000 å (angstroms) is deposited on the wafer boat and on components of the reaction chamber. The wafer boat is then removed from the reaction chamber, and a second set of semiconductor wafers are loaded within the wafer boat. The wafer boat having the second set of semiconductor wafers loaded therein is placed within the reaction chamber. A second undoped semiconductor film is deposited on the second set of semi…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.