Formation of diamond particle interconnects
US6448184B1 · kind B1 · utility
2Cited by
10References
13Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Nov 6, 1998 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | Nov 6, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Rough, conductive diamond film regions are formed on a substrate for establishing electrical contact with a surface mount semiconductor package, or the like. The substrate base is heated in a diamond film gas phase deposition reactor. Molecular hydrogen, a carbon-bearing gas and a dopant source are introduced into the reactor at a temperature conducive to producing a conductive polycrystalline diamond film with sharp facets extending from the film. The diamond film is patterned by etching to remove regions where no electrical contact with the surface mount package is desired.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.