Method and apparatus for use of hydrogen and silanes in plasma
US6448186B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2000 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | Dec 6, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A hydrogen-containing chemical species is included in the reactant gas mixture in a plasma-enhanced CVD process for forming a carbon-containing dielectric film. The CVD reactant gas mixture contains silicon, oxygen, hydrogen and carbon atoms for forming a novel carbon-containing silicon oxide film in which both Si—C and Si—H bonds are present. Because dielectric material deposited in accordance with the invention has a significant number of Si—H bonds, which are more robust than Si—C bonds, it is more resistant to undesired etching and other physical changes during fabrication than dielectric material formed by conventional methods. A method in accordance with the invention allows a faster deposition rate. A dielectric film formed in accordance with the invention has enhanced uniformity characteristics and a dielectric constant less than 3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.