Single-wafer process chamber thermal convection processes
US6448537B1 · kind B1 · utility
Inventor
Key dates
| Filing date | Dec 10, 2001 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | Dec 10, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thermal processing chamber configured to enclose and heat treat a single electronic substrate at an exposed surface, such as a wafer or electronic circuit board being re-melted, includes an enclosed gas tight and particle free heat insulated chamber. An electronic substrate support is placed within the enclosed gas tight and particle free heat insulated chamber. A convection gas inlet distribution manifold adjustable in spatial relation towards and away from the surface to be treated provides a flow of heated gas over and onto the exposed surface of the electronic substrate to be treated. A heated convection gas outlet is placed below the electronic substrate for the collection of heated gas after flowing over, around and below the exposed surface of the electronic substrate to be treated. A door is movable between and open and closed position. The door opens a path to move the electronic substrate into and out of the chamber to and from the electronic substrate support in an open position. The door has a gas-tight seal with respect to the chamber when in the closed position. A heater having an inlet for receiving gas, and an outlet for discharging heated gas provides heated gas …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.