High voltage metal oxide device with enhanced well region
US6448625B1 · kind B1 · utility
19Cited by
7References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2001 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | Mar 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
Abstract
A high voltage MOS device (100) is disclosed. The MOS device comprises an n-well region (113) with two areas. The first area (110) has a high dopant concentration and the second area (112) has a low dopant concentration. Inside the well region a region of a secondary conductivity type (108) is formed. The second area (110) is typically underlying a gate (105). The lower doping concentration in that area helps to increase the breakdown voltage when the device is blocking voltage and helps to decrease on-resistance when the device is in the “on” state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.