High frequency power amplifier having a bipolar transistor
US6448859B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 27, 2001 |
| Grant date | Sep 10, 2002 |
| Priority date | — |
| Expiry date | Mar 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/75
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The object of the present invention is to provide a bipolar transistor which is excellent in uniformity of current distribution in spite of a small ballast resistance, and can constitute an amplifier showing high efficiency and low distortion with little deterioration of distortion even when a digital modulation wave is input thereto. A high frequency power amplifier of the present invention comprises a plurality of transistor blocks having a bipolar transistor, wherein each of the transistor blocks includes a resistance connected to an emitter of the bipolar transistor, a reference voltage generation circuit for generating a reference voltage as a base bias of the bipolar transistor, and a bias generation circuit connected to a base of the bipolar transistor, the bias generation circuit generating a base bias voltage by converting the reference voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.