Method of forming copper interconnection utilizing aluminum capping film
US6451681B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 4, 1999 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Oct 4, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A mostly copper-containing interconnect (126) overlies a semiconductor device substrate (100), and a transitional metallurgy structure (312, 508, 716, 806) that includes an aluminum-containing film (200, 506, 702, 802) contacts a portion of the mostly copper-containing interconnect. In one embodiment, the transitional metallurgy is formed over a portion of a bond pad (128). In an alternative embodiment, the transitional metallurgy includes an energy alterable fuse portion (710) that electrically contacts two conductive regions (712 and 714), and in yet another embodiment, the transitional metallurgy is formed over a copper-containing edge seal portion (809).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.