Method for reclaiming wafer substrate and polishing solution compositions therefor
US6451696B1 · kind B1 · utility
15Cited by
4References
15Claims
0Family size
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Key dates
| Filing date | Aug 27, 1999 |
| Grant date | Sep 17, 2002 |
| Priority date | — |
| Expiry date | Aug 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02032
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for reclaiming a wafer substrate material having a metallic film and a dielectric film includes a step for removing the entire metallic film and a part of the dielectric film with a chemical etching agent so as not to substantially dissolve the wafer substrate material itself, a step for removing the residual dielectric layer and the degenerated zone beneath the surface of the substrate by chemical-mechanical polishing, and a step for polishing at least one surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.